50N06 Transistor Datasheet, 50N06 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Dec 15, 2022 · The 60N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features l VDS 60V l
Mar 15, 2024 · The 60N06 transistor uses advanced trench technology and design to provide excellent on-resistance (RDS(ON)) with low gate charge. It
2 days ago · Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of
立创商城提供 GOFORD (谷峰) 的 场效应管 (MOSFET) 60N06 的PDF数据手册和参考资料,查看 60N06 数据手册和购买 60N06 上立创商城。
60N06 Datasheet. Part #: 60N06. Datasheet: 201Kb/8P. Manufacturer: Unisonic Technologies. Description: 60 Amps, 60 Volts N-CHANNEL POWER MOSFET. 22 Results. Datasheet
Part #: 20N60. Download. File Size: 176Kbytes. Page: 3 Pages. Description: 20A, 600V N-CHANNEL POWER MOSFET. Manufacturer: Unisonic Technologies.
Jan 15, 2025 · 60N06-VB 是一款单N沟道功率MOSFET,采用Trench技术,具备低导通电阻和高电流承载能力。 该型号适用于中高电流和低压降的功率控制和开关应用。
Sep 10, 2019 · General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low
Find highly performing 60n06 mosfet transistor meant to improve circuit efficiency. It is perfect for many uses and provides dependability and the best power management.
60N06-18 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: 60N06-18 Tipo de FET: MOSFET Polaridad de transistor: N
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60N06 Transistor Datasheet, 60N06 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Order today, ships today. 60N06 – N-Channel 60 V 50A (Tc) 69W (Tc) Surface Mount TO-252 from Goford Semiconductor. Pricing and Availability on millions of electronic components from
Dec 19, 2011 · General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild''s proprietary, planar stripe, DMOS technology.
60n06.pdf datasheetUNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement
当天下单,当天发货。来自 Goford Semiconductor 的 60N06 – 表面贴装型 N 通道 60 V 50A(Tc) 69W(Tc) TO-252。DigiKey 提供数以百万计电子元器件的定价和供应信息。
Part #: 60N06A. Download. File Size: 922Kbytes. Page: 6 Pages. Description: N-Channel Enhancement Mode Power MOSFET. Manufacturer: Goford Semiconductor.
Inverters: In inverter circuits converting DC to AC power, especially in applications like solar inverters or uninterruptible power supplies (UPS). LED Drivers: For driving high-power LEDs,
Oct 9, 2020 · View datasheets for (NTB,NVB)60N06 by ON Semiconductor and other related components here.
60N06 GOFORD - 60V 50A 14mΩ 2V 1 N-channel TO-252-2 (DPAK) MOSFETs MOSFETs. Check out the in-stock pricing and datasheet for electronic components from LCSC Electronics.
Dec 11, 2022 · This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
The 60N06 is an N-Channel MOSFET designed with advanced trench technology to provide excellent RDS (ON) with low gate charge. It is suitable for a wide variety of applications,
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Part #: 60N06. Description: 60 Amps, 60 Volts N-CHANNEL POWER MOSFET. File Size: 201.28 Kbytes. Manufacturer: Unisonic Technologies.
Mar 30, 2013 · N-CHANNEL POWER MOSFET Power MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state
60N06由HXY MOSFET (华轩阳电子)设计生产,立创商城现货销售,正品保证,参考价格¥1.64,封装为TO-220。 商城还提供60N06专业规格书、详细参数、引脚图、PCB焊盘图,
Part #: FQP50N06. Download. File Size: 644Kbytes. Page: 8 Pages. Description: 60V N-Channel MOSFET. Manufacturer: Fairchild Semiconductor.
Aug 13, 2019 · 本资料有60N06、60N06 pdf、60N06中文资料、60N06引脚图、60N06管脚图、60N06简介、60N06内部结构图和60N06引脚功能。
Jun 10, 2025 · The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or

Size:310K utc UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
Toshiba America Electro... 60N06 Datasheet. Part #: 60N06. Datasheet: 201Kb/8P. Manufacturer: Unisonic Technologies. Description: 60 Amps, 60 Volts N-CHANNEL POWER MOSFET. 20 Results. Datasheet: 316Kb/8P. Manufacturer: Unisonic Technologies.
HMS60N06D N-Channel Super Trench Power MOSFET Description The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q .
WSR60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSR60N06 uses advanced trench technology BVDSS RDSON ID and design to provide excellent R with low DS (ON) 60V 12m 60Agate charge. It can be used in a wide variety of applications.
HM60N06Description The HM60N06 uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS (ON) 0.63. Size:832K cn hmsemi
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